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Freescale Semiconductor Technical Data
Document Number: MRF9002NR2 Rev. 8, 5/2006
RF Power Field Effect Transistor Array
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. The device is in a PFP - 16 Power Flat Pack package which gives excellent thermal performances through a solderable backside contact. * Typical Performance at 960 MHz, 26 Volts Output Power -- 2 Watts Per Transistor Power Gain -- 18 dB Efficiency -- 50% * Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW Output Power Features * Designed for Maximum Gain and Insertion Phase Flatness * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * RoHS Compliant * In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
MRF9002NR2
1000 MHz, 2 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET
16 1
CASE 978 - 03 PLASTIC PFP - 16
N.C. N.C. GATE1 N.C. GATE2 N.C. GATE3 N.C.
1 2 3 4 5 6 7 8
16 15 14 13 12 11 10 9
DRAIN 1-1 DRAIN 1-2 DRAIN 2-1 DRAIN 2-2 N.C. DRAIN 3-1 DRAIN 3-2 N.C.
(Top View) Note: Exposed backside flag is source terminal for transistors.
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Total Dissipation Per Transistor @ TC = 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ
Figure 1. Pin Connections
Value - 0.5, +65 - 0.5, + 15 4 - 65 to +150 150 Unit Vdc Vdc W C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case, Single Transistor Symbol RJC Value (1) 12 Unit C/W
Table 3. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF9002NR2 1
RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 20 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 25 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 0.1 Adc) Common - Source Amplifier Power Gain @ P1dB (VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz) Drain Efficiency @ P1dB (VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz) Input Return Loss @ P1dB (VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz) Power Output, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz) VGS(th) VGS(Q) VDS(on) 2.4 3 -- -- -- 0.3 4 5 -- Vdc Vdc Vdc Symbol Min Typ Max Unit
Functional Tests (Per Transistor in Freescale Test Fixture, 50 ohm system) Gps IRL P1dB 15 35 -- 34 18 50 - 15 37 -- -- -9 -- dB % dB dBm
MRF9002NR2 2 RF Device Data Freescale Semiconductor
VGS1
+ C7 Z2 C14 R1 Z3
L1
L4 DUT Z4
+ C8 Z5 C16
VDS1 RF1 OUTPUT
RF1 INPUT
Z1 C1 VGS2 Z6 C3 VGS3 Z11 C5
C2 VDS2
+ C9 Z7 C13 + C11 Z12 C15 R3 Z13 R2 Z8
L2
L5 Z9
+ C10 Z10 C18 + C12 Z14 Z15 C17
RF2 INPUT
C4 VDS3
RF2 OUTPUT
L3
L6
RF3 INPUT
C6
RF3 OUTPUT
Figure 2. MRF9002NR2 Broadband Test Circuit Schematic
Table 5. MRF9002NR2 Broadband Test Circuit Component Designations and Values
Designators C1 - C6 C7 - C12 C13 C14, C15 C16, C17 C18 L1 - L6 R1 - R3 Z1, Z11 Z2, Z7, Z12 Z3, Z8, Z13 Z4, Z14 Z5, Z15 Z6 Z9 Z10 PCB Raw PCB Material Bedstead Description 33 pF Chip Capacitors (0805) 1.0 F, 35 V Tantalum Capacitors, B Case, Kemet 8.2 pF Chip Capacitor (0805) 10 pF Chip Capacitors (0805) 2.7 pF Chip Capacitors (0805) 3.3 pF Chip Capacitor (0805) 12 nH Chip Inductors (0805) 0 W Chip Resistors (0805) 1.16 x 28.5 mm Microstrip 0.65 x 5.6 mm Microstrip 0.65 x 2.6 mm Microstrip 1.16 x 19.5 mm Microstrip 1.16 x 17.5 mm Microstrip 1.16 x 12.9 mm Microstrip 1.16 x 27.2 mm Microstrip 1.16 x 4.3 mm Microstrip Etched Circuit Board Rogers RO4350, 0.020, 2.5, x 2.5, er = 3.5 Copper Heatsink
MRF9002NR2 RF Device Data Freescale Semiconductor 3
RF1 INPUT C1 VGS1 VGS2 C7 C16 C8
RF1 OUTPUT C2 VDS1 VDS2
C10 C9 L1 RF2 INPUT C3 C13 R3 L3 MRF9002 960 MHz Rev. B C11 C15 L6 L2 R2 R1
Pin 1
C14
L4
L5
RF2 OUTPUT C18 C4
C12 C17 VDS3
VGS3 C5 RF3 INPUT C6
RF3 OUTPUT
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 3. MRF9002NR2 Broadband Test Circuit Component Layout
MRF9002NR2 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
35 33 Pout , OUTPUT POWER (dBm) 31 29 27 25 23 21 19 17 15 0 2 4 6 8 10 12 14 Pin, INPUT POWER (dBm) VDS = 26 Vdc IDQ = 25 mA f = 960 MHz Single-Tone Pout 19.5 19.25 Gps 19 18.75 18.5 18.25 18 17.75 17.5 17.25 17 16 16 15 10 15 20 25 30 Pout, OUTPUT POWER (dBm) G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 21 20 19 18 17 VDS = 26 Vdc f = 960 MHz Single-Tone 35 40 25 mA 75 mA 50 mA 23 22 100 mA
Figure 4. Output Power and Power Gain versus Input Power
20.3 Gps G ps , POWER GAIN (dB) 20.2 -29 -28 -20 -25 -30 -35 -40 -45 -50 -55
Figure 5. Power Gain versus Output Power
20.1 IMD 20 Pout = 2 W (PEP) IDQ = 25 mA f1 = 960.0 MHz, f2 = 960.1 MHz 22 23 24 25 26 27 28 29 30
-30
IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc)
25 mA 50 mA 75 mA VDS = 26 Vdc f1 = 960.0 MHz, f2 = 960.1 MHz 10 15 20 25 30 35 40
-31
-60 100 mA -65 5
19.9 VDS, DRAIN SOURCE SUPPLY (VOLTS)
-32
Pout, OUTPUT POWER (dBm) PEP
Figure 6. Power Gain and Intermodulation Distortion versus Supply Voltage
0 -10 Pout , OUTPUT POWER (dBm) -20 3rd Order -30 -40 5th Order -50 7th Order -60 -70 10 15 20 25 30 35 40 Pout, OUTPUT POWER (dBm) VDS = 26 Vdc f1 = 960.0 MHz, f2 = 960.1 MHz 41 39 37 35 33 31 29 27 25 925
Figure 7. Intermodulation Distortion versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
Pin = 20 dBm
15 dBm VDS = 26 Vdc IDQ = 25 mA Single-Tone
10 dBm
935
945
955
965
975
985
f, FREQUENCY (MHz)
Figure 8. Intermodulation Distortion Products versus Output Power
Figure 9. Output Power versus Frequency
MRF9002NR2 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
12 11 10 9 C, CAPACITANCE (pF) 8 7 6 5 4 3 2 22 23 24 25 26 27 28 29 30 VDS, DRAIN SOURCE SUPPLY (VOLTS) Crss Coss Ciss MTTF FACTOR (HOURS X AMPS2)
109
108
107
106 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 10. Capacitance versus Drain Source Voltage
Figure 11. MTTF Factor versus Junction Temperature
MRF9002NR2 6 RF Device Data Freescale Semiconductor
TRANSISTORS 1 and 2
TRANSISTOR 3
Zo = 50 T3 985 MHz Zsource f = 925 MHz
Zo = 50
T1 985 MHz Zsource f = 925 MHz T2 985 MHz Zsource
T2 f = 925 MHz Zload 985 MHz f = 925 MHz T1 985 MHz Zload f = 925 MHz
985 MHz T3 Zload f = 925 MHz
VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource 4.5 + j13.3 4.3 + j15.3 4.1 + j15.8 Transistor 1 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource 6.0 + j12.3 5.9 + j14.3 5.8 + j16.5 Transistor 2 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource 4.3 + j12.2 4.3 + j14.0 3.9 + j15.9 Transistor 3 Zload 23.1 + j6.5 22.8 + j8.4 22.6 + j9.3 Zload 19.7 + j27.8 22.0 + j23.9 22.5 + j25.4 Input Matching Network Device Under Test Output Matching Network Zload 23.4 + j9.2 23.2 + j10.4 23.0 + j11.1 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance MRF9002NR2 RF Device Data Freescale Semiconductor 7
NOTES
MRF9002NR2 8 RF Device Data Freescale Semiconductor
NOTES
MRF9002NR2 RF Device Data Freescale Semiconductor 9
NOTES
MRF9002NR2 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
h X 45 _ A E2
1 16 NOTES: 1. CONTROLLING DIMENSION: MILLIMETER. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE -H- IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 PER SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. MILLIMETERS MIN MAX 2.000 2.300 0.025 0.100 1.950 2.100 6.950 7.100 4.372 5.180 8.850 9.150 6.950 7.100 4.372 5.180 0.466 0.720 0.250 BSC 0.300 0.432 0.300 0.375 0.180 0.279 0.180 0.230 0.800 BSC --- 0.600 0_ 7_ 0.200 0.200 0.100
14 x e
D e/2
D1
8
9
E1
8X
B
BOTTOM VIEW
E CB
S
bbb Y A A2
M
b1 c
C
DATUM PLANE SEATING PLANE
H
SECT W - W
L1
ccc C
q
W W L 1.000 0.039 DETAIL Y A1
GAUGE PLANE
CASE 978 - 03 ISSUE C PLASTIC PFP - 16
RF Device Data Freescale Semiconductor
CCC EE CCC EE
b aaa
M
c1
CA
S
DIM A A1 A2 D D1 E E1 E2 L L1 b b1 c c1 e h q aaa bbb ccc
MRF9002NR2 11
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MRF9002NR2
Rev. 12 8, 5/2006 Document Number: MRF9002NR2
RF Device Data Freescale Semiconductor

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